Cvd Graphene Copper Etching

Figure 4 shows the raman spectra of the cvd grown bilayer graphene transferred onto pet wafers using the three different etching solutions.

Cvd graphene copper etching.

If the raman spectra of bilayer graphene transferred to pet wafer is compared to that the one of bilayer graphene on copper figure 2 a it can be concluded that the different transfer steps affected the. Synthesis of graphene films on copper foils by chemical vapor deposition. Wei guo feng jing jian xiao ce zhou yuanwei lin shuai wang. Here to investigate the size and density of the graphene domains the cvd growth of graphene was terminated by stopping the ch 4 feedstock prior to covering the entire cu surface.

The pmma pva graphene copper foil block was floated on the surface of a solution of 0 3 m ammonium persulfate aldrich 98 at 0 c for 24 h to etch the copper foil. Advanced materials 2016 28 29 6247 6252. For the fecl 3 etchant we found that the average size of the. 2a and b show the etching time evolution of the graphene domain size on the copper foils etched by an fecl 3 or an nh 4 2 s 2 o 8 etchant.

We report a simple clean and highly anisotropic hydrogen etching method for chemical vapor deposited cvd graphene catalyzed by the copper substrate. Graphene grown on copper by chemical vapor deposition cvd has been significantly explored for the synthesis of high quality graphene since the popular recipe for single layer graphene growth was introduced in 2009 1 many years after the first report of the deposition of graphene on cu in 1992 2.